vs-31dq03, vs-31dq03-m3, vs-31dq04, vs-31dq04-m3 www.vishay.com vishay semiconductors revision: 20-sep-11 1 document number: 93319 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 schottky rectifier, 3.3 a features ? low profile, axial leaded outline ? high frequency operation ? very low forward voltage drop ? high purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance ? guard ring for enhanced ruggedness and long term reliability ? compliant to rohs directive 2002/95/ec ? designed and qualifie d for commercial level ? halogen-free according to iec 61249-2-21 definition (-m3 only) description the vs-31dq... axial leaded schottky rectifier has been optimized for very low forwar d voltage drop, with moderate leakage. typical applications are in switching power supplies, converters, freewheeling diodes, and reverse battery protection product summary package do-201ad (c-16) i f(av) 3.3 a v r 30 v, 40 v v f at i f see electrical table i rm max. 20 ma at 125 c t j max. 150 c diode variation single die e as 6.0 mj cathode anode c-16 major ratings and characteristics symbol characteristics values units i f(av) rectangular waveform 3.3 a v rrm 30/40 v i fsm t p = 5 s sine 450 a v f 3 apk, t j = 25 c 0.57 v t j - 40 to 150 c voltage ratings parameter symbol vs-31dq03 vs-31dq03-m3 vs-31dq04 vs-31dq04-m3 units maximum dc reverse voltage v r 30 30 40 40 v maximum working peak reverse voltage v rwm absolute maximum ratings parameter symbol test conditions values units maximum average forward current see fig. 4 i f(av) 50 % duty cycle at t l = 117 c, rectan gular waveform 3.3 a maximum peak one cycle non-repetitive surge current see fig. 6 i fsm 5 s sine or 3 s rect. pulse following any rated load condition and with rated v rrm applied 450 10 ms sine or 6 ms rect. pulse 90 non-repetitive avalanche energy e as t j = 25 c, i as = 1.0 a, l = 12 mh 6.0 mj repetitive avalanche current i ar current decaying linear ly to zero in 1 s frequency limited by t j maximum v a = 1.5 x v r typical 1.0 a
vs-31dq03, vs-31dq03-m3, vs-31dq04, vs-31dq04-m3 www.vishay.com vishay semiconductors revision: 20-sep-11 2 document number: 93319 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 note (1) pulse width < 300 s, duty cycle < 2 % note (1) thermal runaway condition for a diode on its own heatsink electrical specifications parameter symbol test conditions values units maximum forward voltage drop see fig. 1 v fm (1) 3 a t j = 25 c 0.57 v 6 a 0.71 3 a t j = 125 c 0.51 6 a 0.62 maximum reverse leakage current see fig. 4 i rm (1) t j = 25 c v r = rated v r 1 ma t j = 125 c 20 typical junction capacitance c t v r = 5 v dc (test signal range 100 khz to 1 mhz) 25 c 190 pf typical series inductance l s measured lead to lead 5 mm from package body 9.0 nh maximum voltage rate of charge dv/dt rated v r 10 000 v/s thermal - mechanical specifications parameter symbol test conditions values units maximum junction and storage temperature range t j (1) , t stg - 40 to 150 c maximum thermal resistance, junction to ambient r thja dc operation without cooling fin 80 c/w typical thermal resistance, junction to lead r thjl with fin 20 mm x 20 mm (0.79" x 0.79") 1.0 mm (0.04") thickness 15 approximate weight 1.2 g 0.042 oz. marking device case style c-16 31dq03 31dq04 dp tot dt j ------------- 1 r thja -------------- <
vs-31dq03, vs-31dq03-m3, vs-31dq04, vs-31dq04-m3 www.vishay.com vishay semiconductors revision: 20-sep-11 3 document number: 93319 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 1 - maximum forward voltage drop characteristics fig. 2 - - typical valu es of reverse current vs. reverse voltage fig. 3 - - typical junction capacitance vs. reverse voltage fig. 4 - maximum allowa ble lead temperature vs. average forward current fig. 5 - forward power loss characteristics fig. 6 - maximum non- repetitive surge current note (2) formula used: t c = t j - (pd + pd rev ) x r thjc ; pd = forward power loss = i f(av) x v fm at (i f(av) /d) (see fig. 6); pd rev = inverse power loss = v r1 x i r (1 - d); i r at v r1 = 80 % rated v r i f - instantaneous forward current (a) 93319_01 v fm - forward voltage drop (v) 0.1 1 10 100 0 0.3 0.6 0.9 1.2 t j = 150 c t j = 125 c t j = 25 c i r - reverse current (ma) v r - reverse voltage (v) 93319_02 0.001 0.01 0.1 1 10 100 0 10 20 30 40 t j = 150 c t j = 125 c t j = 25 c c t - junction capacitance (pf) v r - reverse voltage (v) 93319_03 10 100 1000 0 40 80 120 160 200 t j = 25 c allowable case temperature (c) i f(av) - average forward current (a) 93319_04 0 1 2 3 4 5 70 90 110 130 150 dc s ee note (1) sq uare wave (d = 0.50) 80 % rated v r applied average forward current - i f(av) (a) average power loss (w) 93319_05 0 0.5 1 1.5 2 2.5 0 1 2 3 4 5 dc rm s limit d = 0.20 d = 0.25 d = 0.33 d = 0.50 d = 0.75 t p - square wave pulse duration (s) i fsm - non-repetitive surge current (a) 93319_06 10 100 1000 10 100 1000 10 000 at any rated load condition and with rated v rrm applied following s urge
vs-31dq03, vs-31dq03-m3, vs-31dq04, vs-31dq04-m3 www.vishay.com vishay semiconductors revision: 20-sep-11 4 document number: 93319 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 ordering information table ordering information (example) preferred p/n quantity per t/r minimum order quantity packaging description vs-31dq03 500 500 bulk vs-31dq03tr 1200 1200 tape and reel vs-31dq03-m3 500 500 bulk vs-31DQ03TR-M3 1200 1200 tape and reel vs-31dq04 500 500 bulk vs-31dq04tr 1200 1200 tape and reel vs-31dq04-m3 500 500 bulk vs-31dq04tr-m3 1200 1200 tape and reel 1 - 31 = current rating 3.3 a 2 - d = do-201 package 3 - q = schottky q.. series 4 - 04 = voltage ratings 5 - tr = tape and reel package none = bulk package 03 = 30 v 04 = 40 v device code 6 2 4 3 5 31 d q 04 tr vs- 1 -m3 7 - vishay semiconductors product 6 7 none = lead (pb)-free and rohs compliant -m3 = halogen-free, rohs compliant, and terminations lead (pb)-free - environmental digit links to related documents dimensions www.vishay.com/doc?95242 part marking information www.vishay.com/doc?95304 packaging information www.vishay.com/doc?95338
outline dimensions www.vishay.com vishay semiconductors revision: 29-aug-11 1 document number: 95242 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 axial do-201ad (c-16) dimensions in millimeters (inches) 21.0 (0.83) min. (2 places) 10.0 (0.39) max. ? 5.8 (0.23) max. 10.0 (0.39) max. ? 5.8 (0.23) max. 21.0 (0.83) min. (2 places) 2.54 (0.100) max. flash (2 places) ? 1.40 (0.055) ? 1.20 (0.047) (2 places) ? 1.40 (0.055) ? 1.20 (0.047) (2 places) cathode band
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